FDS8884 Datasheet, MOSFET, Fairchild Semiconductor

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FDS8884 Features and benefits

* Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
* Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
* Low gate charge
* 100% RG Tested
* RoHS Compliant M ENTA.

FDS8884 Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching .

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